Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
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182 results for Eduard Cartier
Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
- Andreas Kerber
- Eduard Albert Cartier
- 2009
- IEEE T-DMR
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
Characterization of fast relaxation during BTI stress in conventional and advanced CMOS devices with HfO2 gate stacks
- Andreas Kerber
- Kingsuk Maitra
- et al.
- 2008
- IEEE Transactions on Electron Devices
Charge trapping at the low- k dielectric-silicon interface probed by the conductance and capacitance techniques
- J.M. Atkin
- E. Cartier
- et al.
- 2008
- Applied Physics Letters
Photocurrent spectroscopy of low- k dielectric materials: Barrier heights and trap densities
- J.M. Atkin
- D. Song
- et al.
- 2008
- Journal of Applied Physics
Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study
- Kingsuk Maitra
- Martin M. Frank
- et al.
- 2007
- Journal of Applied Physics
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
- C. Choi
- E. Cartier
- et al.
- 2007
- Microelectronic Engineering
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering