A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
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75 results for Juntao Li
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016
Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
- et al.
- 2016
- IEEE Electron Device Letters
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Ruthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
Copper-to-dielectric heterogeneous bonding for 3D integration
- Wei Lin
- Juntao Li
- et al.
- 2014
- LTB-3D 2014
Thermal stress control in Cu interconnects
- Chih-Chao Yang
- Baozhen Li
- et al.
- 2014
- IITC/AMC 2014