Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- Chun Wing Yeung
- Jingyun Zhang
- et al.
- 2018
- IEDM 2018
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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55 results for Nicolas Loubet
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2013
- IEEE Electron Device Letters
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- ECS Meeting 2023
Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- SSDM 2023