SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
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75 results for Dave Harame
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz
- Vibhor Jain
- T. Kessler
- et al.
- 2014
- BCTM 2014