Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

Date

Start

End

Featured collections

Popular topics

28 results for Anthony Domenicucci

(110) Channel, SiON gate-dielectric PMOS with record high I_on=1 mA/μm through channel stress and source drain external resistance (R _ext) engineering
- - B. Yang
  - A. Waite
  - et al.
- 2007
- IEDM 2007
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- - S. Narasimha
  - K. Onishi
  - et al.
- 2006
- IEDM 2006
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- - W.-H. Lee
  - A. Waite
  - et al.
- 2005
- IEDM 2005
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- - B.H. Lee
  - A.C. Mocuta
  - et al.
- 2002
- IEDM 2002
Transient enhanced diffusion and dose loss of indium in silicon
- - Omer Dokumaci
  - Paul Ronsheim
  - et al.
- 1999
- MRS Spring Meeting 1999
Characterization of novel TiN/HfO₂ metal insulator semiconductor stack for 32nm eDRAM
- - Puneet Goyal
  - Sneha Gupta
  - et al.
- 2010
- IEEE International SOI Conference 2010
Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction
- - J. Li
  - A. Lamberti
  - et al.
- 2008
- ECS Meeting 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- - M. Hamaguchi
  - H. Yin
  - et al.
- 2008
- VLSI Technology 2008
Hole transport in nanoscale p-type MOSFET SOI devices with high strain
- - H. Nayfeh
  - S.-J. Jeng
  - et al.
- 2007
- DRC 2007
Implementation of robust nickel alloy salicide process for high-performance 65nm SOI CMOS manufacturing
- - Jay Strane
  - David Brown
  - et al.
- 2007
- VLSI-TSA 2007