Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2014
- Thin Solid Films
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28 results for Anthony Domenicucci
Dual-lens electron holography for junction profiling and strain mapping on semiconductor devices
- Yun-Yu Wang
- Anthony Domenicucci
- et al.
- 2014
- Electronic Device Failure Analysis
Strain mapping of Si devices with stress memorization processing
- Y.Y. Wang
- John Bruley
- et al.
- 2013
- Applied Physics Letters
Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping
- Y.Y. Wang
- J. Li
- et al.
- 2013
- Ultramicroscopy
New opportunities for SiGe and Ge channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2011
- Microelectronic Engineering
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
- Puneet Goyal
- Sneha Gupta
- et al.
- 2010
- IEEE International SOI Conference 2010
Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction
- J. Li
- A. Lamberti
- et al.
- 2008
- ECS Meeting 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
An investigation of electrical current induced phase transformations in the NiPtSi/polysilicon system
- Deok-Kee Kim
- Anthony Domenicucci
- et al.
- 2008
- Journal of Applied Physics
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007