On the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces
- Efthimios Kaxiras
- J.D. Joannopoulos
- 1989
- Surface Science
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30 results for Efthimios Kaxiras
Structural model for a covalently bonded Si45 cluster
- Efthimios Kaxiras
- 1989
- Chemical Physics Letters
Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface
- C.K. Shih
- Efthimios Kaxiras
- et al.
- 1989
- Physical Review B
Reply to comment on ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study
- Efthimios Kaxiras
- Efstratios Manousakis
- 1989
- Physical Review B
New classical potential for accurate simulation of atomic processes in Si
- Efthimios Kaxiras
- K.C. Pandey
- 1988
- Physical Review B
Hole dynamics in the two-dimensional strong-coupling Hubbard Hamiltonian
- Efthimios Kaxiras
- Efstratios Manousakis
- 1988
- Physical Review B
Ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study
- Efthimios Kaxiras
- Efstratios Manousakis
- 1988
- Physical Review B
Ab initio theory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1987
- Physical Review B
Ab initio theory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1»1»1»)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1987
- Physical Review B
(2×2) reconstructions of the {111} polar surfaces of GaAs
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1986
- Physical Review B