Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
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28 results for A. Topol
Structure, design and process control for Cu bonded interconnects in 3D integrated circuits
- Kuan-Neng Chen
- Sang Hwui Lee
- et al.
- 2006
- IEDM 2006
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- IEDM 2005
Enabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures
- Anna W. Topol
- Bruce K. Furman
- et al.
- 2004
- ECTC 2004
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002
Novel approach to reduce source/drain series and contact resistance in high-performance UTSOI CMOS devices using selective electrodeless CoWP or CoB process
- James Pan
- Anna Topol
- et al.
- 2007
- IEEE Electron Device Letters
Contact resistivity of NiPtSi on n-doped silicon activated by laser annealing
- Francois Pagette
- Paul M. Solomon
- et al.
- 2008
- MRS Proceedings 2008
Upside-down FETS
- D.C. La Tulipe Jr.
- D.J. Frank
- et al.
- 2008
- IEEE International SOI Conference 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008