Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- C. Andersson
- C. Rossel
- et al.
- 2009
- Microelectronic Engineering
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71 results for Chiara Marchiori
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Very high- κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
- G. Mavrou
- P. Tsipas
- et al.
- 2008
- Applied Physics Letters
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks
- P. Tsipas
- S.N. Volkos
- et al.
- 2008
- Applied Physics Letters
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Optical properties of epitaxial SrHf O3 thin films grown on Si
- M. Sousa
- C. Rossel
- et al.
- 2007
- Journal of Applied Physics
SrHfO3 as gate dielectric for future CMOS technology
- C. Rossel
- M. Sousa
- et al.
- 2007
- Microelectronic Engineering
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering