Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2014
- Thin Solid Films
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18 results for Jinghong Li
Strain mapping of Si devices with stress memorization processing
- Y.Y. Wang
- John Bruley
- et al.
- 2013
- Applied Physics Letters
Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping
- Y.Y. Wang
- J. Li
- et al.
- 2013
- Ultramicroscopy
Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ECS Meeting 2012
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- Zhibin Ren
- G. Pei
- et al.
- 2008
- VLSI Technology 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- Haizhou Yin
- C.Y. Sung
- et al.
- 2006
- IEDM 2006