Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Publications
Date
Featured collections
Popular topics
14 results for Young-Hee Kim
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Band edge high-K /metal gate n-MOSFETs using ultra thin capping layers
- V.K. Paruchuri
- V. Narayanan
- et al.
- 2007
- VLSI-TSA 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Tunable Workfunction for Fully Silicied Gates (FUSI) and Proposed Mechanisms
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2006
- VLSI-TSA 2006