Contacts in advanced CMOS: History and emerging challenges
Christian Lavoie, Praneet Adusumilli, et al.
ECS Meeting 2017 - New Orleans
We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(1 0 0) using in-situ high-resolution ion scattering and high-resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 °C to 290 °C. The film composition of this intermediate phase is found to be 50% Ni:50% Si, without evidence for long-range structure, indicating the film to be a homogeneous monosilicide NiSi phase. The final phase is resemblant of the cubic disilicide NiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si. Along the [1 0 0] axis, the lattices of the film and the substrate are found in perfect alignment. Due to the epitaxial growth of the silicide, a contraction of the c lattice constant of the film by 0.7–1% is detected.
Christian Lavoie, Praneet Adusumilli, et al.
ECS Meeting 2017 - New Orleans
Nicolas Breil, A. Carr, et al.
VLSI Technology 2017
Mike El Kousseifi, Khalid Hoummada, et al.
Acta Materialia
Zhen Zhang, Siyuranga Obasa Koswatta, et al.
IEEE Electron Device Letters