Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics
Publications
Date
Featured collections
Popular topics
72 results for Harold J. Hovel
Switching and memory characteristics of ZnSe - Ge heterojunctions
- H.J. Hovel
- J.J. Urgell
- 2003
- Journal of Applied Physics
Electrical and optical properties of rf-sputtered GaN and InN
- H.J. Hovel
- J.J. Cuomo
- 2003
- Applied Physics Letters
Switching and memory in ZnSe single bond sign Ge heterojunctions
- H.J. Hovel
- 2003
- Applied Physics Letters
High-efficiency Ga1-xAlxAsSingle Bond signGaAs solar cells
- J. Woodall
- H.J. Hovel
- 2003
- Applied Physics Letters
Si film electrical characterization in SOI substrates by the HgFET technique
- H.J. Hovel
- 2003
- Solid-State Electronics
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator analytical model, simulation, and measurements
- D. Munteanu
- S. Cristoloveanu
- et al.
- 1999
- Electrochemical and Solid-State Letters
Scanned photoluminescence of semiconductors
- H.J. Hovel
- 1999
- Semiconductor Science and Technology
CMOS-on-SOI ESD protection networks
- S. Voldman
- R. Schulz
- et al.
- 1998
- Journal of Electrostatics