D.A. Buchanan, J.H. Stathis, et al.
Microelectronic Engineering
The thermal stability of a plasma-deposited amorphous carbon film was enhanced by using acetylene heavily diluted with He. The film preserved its hardness even after annealing at ≅590°C in Ar/H2, while a film deposited in similar conditions in an acetylene/Ar mixture softened significantly. The I-V characteristics of n- and p-type Si/amorphous carbon heterojunctions showed a 0.2 eV discrepancy. This is attributed to an offset in the conduction band of the amorphous carbon with respect to Si. © 1994 American Institute of Physics.
D.A. Buchanan, J.H. Stathis, et al.
Microelectronic Engineering
Yih-Cheng Shih, Masanori Murakami, et al.
Journal of Applied Physics
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
V.Y. Merritt, H.J. Hovel
Applied Physics Letters