On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
- J. Westlinder
- T. Schram
- et al.
- 2003
- IEEE Electron Device Letters
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40 results for A. Kerber
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters
Physics based PBTI model for accelerated estimation of 10 year lifetime
- Sufi Zafar
- A. Kerber
- et al.
- 2014
- VLSI Technology 2014
The past, present and future of high-k/metal gates
- Kisik Choi
- Takashi Ando
- et al.
- 2013
- ECS Meeting 2013
Characterization and optimization of charge trapping in high-k dielectrics
- Eduard Cartier
- Takashi Ando
- et al.
- 2013
- IRPS 2013
Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process
- W. McMahon
- C. Tian
- et al.
- 2013
- IRPS 2013
Bias temperature instability in high-κ/metal gate transistors - Gate stack scaling trends
- Siddarth Krishnan
- Vijay Narayanan
- et al.
- 2012
- IRPS 2012
Voltage ramp stress based stress-and-sense test method for reliability characterization of Hf-base high-k/metal gate stacks for CMOS technologies
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- ECS Meeting 2011
Fast characterization of the Static Noise Margin degradation of cross-coupled inverters and correlation to BTI instabilities in MG/HK devices
- Andreas Kerber
- N. Pimparkar
- et al.
- 2011
- IRPS 2011
Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs
- Chia-Yu Chen
- Qiushi Ran
- et al.
- 2011
- IRPS 2011