Cu CMP and its challenge for 20nm nodes and beyond
- John H. Zhang
- Wei-Tsu Tseng
- et al.
- 2012
- MRS Spring Meeting 2012
Publications
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149 results for C. K. Hu
Microstructure, impurity and metal cap effects on Cu electromigration
- C. K. Hu
- Lynne Gignac
- et al.
- 2012
- AIP-CP 2012
Electromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES
Effects of Al and Mn impurities on Cu electromigration
- C.-K. Hu
- J. Ohm
- et al.
- 2011
- ADMETA 2011
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Thermal stability of copper contact metallization using Ru-containing liner
- Soon-Cheon Seo
- C.-C. Yang
- et al.
- 2011
- Electrochemical and Solid-State Letters
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010