Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
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149 results for C. K. Hu
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Advanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- Griselda Bonilla
- Lawrence A. Clevenger
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
The effect of microstructure on resistivity and reliability in copper interconnects
- Lynne M. Gignac
- C.-K. Hu
- et al.
- 2007
- AMC 2007