Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
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149 results for C. K. Hu
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009
Three-dimensional measurement of line edge roughness in copper wires using electron tomography
- Peter Ercius
- Lynne M. Gignac
- et al.
- 2009
- Microscopy and Microanalysis
Electromigration reliability in nanoscale Cu interconnects
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- MRS Fall Meeting 2007
The effect of microstructure on resistivity and reliability in copper interconnects
- Lynne M. Gignac
- C.-K. Hu
- et al.
- 2007
- AMC 2007
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
Electromigration reliability of advanced interconnects
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- International Workshop on Stress-Induced Phenomena in Metallization 2007
Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES