Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- Bomsoo Kim
- Dong-Il Bae
- et al.
- 2013
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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52 results for T. Standaert
Aggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- Kingsuk Maitra
- Ali Khakifirooz
- et al.
- 2011
- IEEE Electron Device Letters
Novel low k Dielectric materials for nano device interconnect technology
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2020
- VLSI-TSA 2020
Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and beyond
- Koichi Motoyama
- O. Van Der Straten
- et al.
- 2018
- IITC 2018
A Study on SADP Process Refresh for Patterning Correction
- James H.-C. Chen
- Isabel C Estrada-Raygoza
- et al.
- 2018
- IITC 2018
Impact of Liner Metals on Copper Resistivity at beyond 7nm Dimensions
- H. Huang
- Nicholas A. Lanzillo
- et al.
- 2018
- IITC 2018
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
- Benjamin D. Briggs
- C.B. Pcethala
- et al.
- 2018
- IITC 2018
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017