Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs
- Abhijeet Paul
- Chun-Chen Yeh
- et al.
- 2013
- S3S 2013
Publications
Date
Featured collections
Popular topics
52 results for T. Standaert
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices
- S. Lee
- Richard A. Wachnik
- et al.
- 2013
- VLSI Technology 2013
Channel doping impact on FinFETs for 22nm and beyond
- Chung-Hsun Lin
- R. Kambhampati
- et al.
- 2012
- VLSI Technology 2012
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
- X. Yang
- Kingsuk Maitra
- et al.
- 2011
- IEEE International SOI Conference 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
- Chung-Hsun Lin
- Wilfried Haensch
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Opportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- CSTIC 2011