Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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52 results for T. Standaert

Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs
- - Abhijeet Paul
  - Chun-Chen Yeh
  - et al.
- 2013
- S3S 2013
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- - A. Khakifirooz
  - R. Sreenivasan
  - et al.
- 2013
- S3S 2013
Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices
- - S. Lee
  - Richard A. Wachnik
  - et al.
- 2013
- VLSI Technology 2013
Channel doping impact on FinFETs for 22nm and beyond
- - Chung-Hsun Lin
  - R. Kambhampati
  - et al.
- 2012
- VLSI Technology 2012
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
- - X. Yang
  - Kingsuk Maitra
  - et al.
- 2011
- IEEE International SOI Conference 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- - Tenko Yamashita
  - Veeraraghvan S. Basker
  - et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm² SRAM cell
- - Kangguo Cheng
  - A. Khakifirooz
  - et al.
- 2011
- VLSI Technology 2011
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
- - Chung-Hsun Lin
  - Wilfried Haensch
  - et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm² SRAM cell
- - Kangguo Cheng
  - A. Khakifirooz
  - et al.
- 2011
- VLSI Circuits 2011
Opportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology
- - Tenko Yamashita
  - Veeraraghvan S. Basker
  - et al.
- 2011
- CSTIC 2011