Thermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003
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64 results for Philip Trouilloud
Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
- Jonathan Z. Sun
- Philip Trouilloud
- et al.
- 2019
- AIP Advances
Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
- J. Nowak
- R.P. Robertazzi
- et al.
- 2011
- IEEE Magnetics Letters
Easy-plane dominant stochastic magnetic tunnel junction with synthetic antiferromagnetic layers
- Jonathan Z. Sun
- Christopher Safranski
- et al.
- 2023
- Physical Review B
Stochastic magnetic tunnel junction with easy-plane dominant anisotropy
- Jonathan Z. Sun
- Christopher Safranski
- et al.
- 2023
- Physical Review B
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions
- Christopher Safranski
- Jan Kaiser
- et al.
- 2021
- Nano Letters
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
- J. J. Nowak
- Raphael P. Robertazzi
- et al.
- 2016
- IEEE Magnetics Letters
Materials investigation for thermally-assisted magnetic random access memory robust against 400°C temperatures
- A. Annunziata
- Philip Trouilloud
- et al.
- 2015
- Journal of Applied Physics
Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)
- D.C. Worledge
- G. Hu
- et al.
- 2014
- Journal of Applied Physics