A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
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105 results for Ghavam Shahidi
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
Anomalous Voltage Overshoot During Turn-Off of Thin-Film n-Channel SOI MOSFET's
- E. Dubois
- Ghavam G. Shahidi
- et al.
- 1993
- IEEE Electron Device Letters
Saturation transconductance of deep-submicron-channel MOSFETs
- Y. Taur
- C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
Understanding of enhanced sensitivity to Hot Carrier degradation in drain engineered n-FETs
- C.C.-H. Hsu
- B.S. Wu
- et al.
- 1992
- SSDM 1992
SOI: Opportunities and challenges for Sub-0.25 μu VLSI
- Ghavam G. Shahidi
- 1992
- BCTM 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992