High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
Publications
Date
Featured collections
Popular topics
188 results for Devendra Sadana
Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2009
- Electrochemical and Solid-State Letters
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Opportunities and challenges for germanium and silicon-germanium channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2009
- ECS Meeting 2009
Improving silicon crystallinity by grain reorientation annealing
- K.L. Saenger
- J.P. De Souza
- et al.
- 2009
- MRS Spring Meeting 2009
High performance long- and short-channel in0.7ga 0.3as-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- DRC 2008
DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs
- S.W. Bedell
- A. Majumdar
- et al.
- 2008
- DRC 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Scaling of ino.7gao.3as buried-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- IEDM 2008