Synthesis and control of ultra thin gate oxides for the 90 and 65 NM nodes
- Joseph F. Shepard Jr.
- Anthony Chou
- et al.
- 2005
- RTP 2005
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48 results for Paul Ronsheim
An overview of 300mm SOI starting wafer quality and its yield detractors
- Pei Y. Tsai
- Marlene Almonte
- et al.
- 2005
- ISTFA 2005
Retardation of arsenic diffusion in silicon-germanium by co-implantation
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 2004
- ECS Meeting 2004
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS device
- K.-L. Lee
- F. Cardone
- et al.
- 2004
- ECS Meeting 2004
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Modeling of the diffusion of implanted boron in strained Si/Si1-xGex
- Huilong Zhu
- Kam-Leung Lee
- et al.
- 2002
- SISPAD 2002
Backside sputter depth profiling of phosphorus diffusion from a polysilicon source
- P.A. Ronsheim
- D. Chidambarrao
- et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Strained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics