Ultra-low emissivity alpha-particle detection
- Michael S. Gordon
- Kenneth P. Rodbell
- et al.
- 2012
- IEEE TNS
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48 results for Paul Ronsheim
Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
- Zhen Zhang
- Joanna Atkin
- et al.
- 2012
- IEEE T-ED
Pulsed-laser atom probe tomography of p-type field effect transistors on Si-on-insulator substrates
- S. Jin
- K.S. Jones
- et al.
- 2011
- Journal of Vacuum Science and Technology B
SIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis
Suppression of boron diffusion in deep submicron devices
- Michael A. Gribelyuk
- Phil Oldiges
- et al.
- 2011
- Journal of Vacuum Science and Technology B
Dopant measurements in semiconductors with atom probe tomography
- P.A. Ronsheim
- M. Hatzistergos
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Impurity measurements in silicon with D-SIMS and atom probe tomography
- P.A. Ronsheim
- P. Flaitz
- et al.
- 2008
- Applied Surface Science
Threshold voltage control in NiSi-Gated MOSFETs through SIIS
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2005
- IEEE Transactions on Electron Devices
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics
Universal tunneling behavior in technologically relevant P/N junction diodes
- Paul M. Solomon
- Jason Jopling
- et al.
- 2004
- Journal of Applied Physics