Epitaxial germanium-on-insulator grown on (001) Si
- J.W. Seo
- Ch. Dieker
- et al.
- 2007
- Microelectronic Engineering
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14 results for A. Dimoulas
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy
- Z.M. Rittersma
- J.C. Hooker
- et al.
- 2006
- Journal of Applied Physics
Hf O2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
- J.W. Seo
- Ch. Dieker
- et al.
- 2005
- Applied Physics Letters