Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2
- Nikitas Siannas
- Christina Zacharaki
- et al.
- 2022
- Communications Physics
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14 results for A. Dimoulas
Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Current challenges in Ge MOS technology
- A. Dimoulas
- M. Houssa
- et al.
- 2006
- ECS Meeting 2006
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
- José P. B. Silva
- Ruben Alcala
- et al.
- 2023
- APL Materials
Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition
- C. Zacharaki
- P. Tsipas
- et al.
- 2020
- Applied Physics Letters
Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- C. Andersson
- C. Rossel
- et al.
- 2009
- Microelectronic Engineering
Very high- κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
- G. Mavrou
- P. Tsipas
- et al.
- 2008
- Applied Physics Letters
Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks
- P. Tsipas
- S.N. Volkos
- et al.
- 2008
- Applied Physics Letters