Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
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14 results for Tibor Bolom
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Extendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnects
- Andrew H. Simon
- Tibor Bolom
- et al.
- 2008
- MRS Spring Meeting 2008
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013
X-ray characterization of PEALD versus PVD tantalum nitride barrier deposition and the impact on via contact resistance
- Xunyuan Zhang
- Oscar Van der Straten
- et al.
- 2013
- ECS Transactions
Mn-dopant segregation as an indicator of barrier integrity in 32nm groundrule Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder H. Baumann
- et al.
- 2011
- ADMETA 2011
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010