Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
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27 results for John Aitken
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure
- A. Reisman
- J.M. Aitken
- et al.
- 2019
- JES
Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion
- Fen Chen
- Michael Shinosky
- et al.
- 2012
- Applied Physics Letters
Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- D.J. DiMaria
- J.M. Aitken
- et al.
- 2008
- Journal of Applied Physics
Electron trapping by radiation-induced charge in MOS devices
- J.M. Aitken
- D.R. Young
- 2008
- Journal of Applied Physics
Current and C-V instabilities in SiO2 at high fields
- P. Solomon
- J.M. Aitken
- 2008
- Applied Physics Letters
Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressing
- D.J. DiMaria
- Z.A. Weinberg
- et al.
- 2008
- Journal of Applied Physics
Electron trapping in electron-beam irradiated SiO2
- J.M. Aitken
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
- A. Acovic
- C.C.-H. Hsu
- et al.
- 1993
- Solid State Electronics