Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
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39 results for Heinz Siegwart
Optical properties of epitaxial SrHf O3 thin films grown on Si
- M. Sousa
- C. Rossel
- et al.
- 2007
- Journal of Applied Physics
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
SrHfO3 as gate dielectric for future CMOS technology
- C. Rossel
- M. Sousa
- et al.
- 2007
- Microelectronic Engineering
Field-effect transistors with SrHfQ3 as gate oxide
- C. Rossel
- B. Mereu
- et al.
- 2006
- Applied Physics Letters
Structural domains in antiferromagnetic LaFeO3 thin films
- Jin Won Seo
- Christel Dieker
- et al.
- 2006
- Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques
Structural domains in antiferromagnetic LaFeO3thin films
- Jin Won Seo
- Christel Dieker
- et al.
- 2006
- Journal of Materials Research
Solid phase epitaxy of SrTi O3 on (Ba,Sr) OSi (100): The relationship between oxygen stoichiometry and interface stability
- G.J. Norga
- C. Marchiori
- et al.
- 2006
- Journal of Applied Physics
Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO3 gate dielectrics on Si(100)
- Gerd Norga
- Chiara Marchiori
- et al.
- 2006
- MRS Spring Meeting 2006
Thermal stability of the SrTi O3 (Ba,Sr) O stacks epitaxially grown on Si
- Chiara Marchiori
- M. Sousa
- et al.
- 2006
- Applied Physics Letters