Field-effect transistors with SrHfQ₃ as gate oxide

Abstract

The authors demonstrate that the compound SrHfO3 grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate n- and p-metal-oxide semiconductor field-effect transistors with equivalent oxide thickness (EOT) below 1 nm. The electrical properties on capacitors and transistors show low gate leakage and good capacitance and I-V output characteristics. The lower electron and hole mobilities, which are strongly limited by charge trapping, nevertheless fit well with the general trend of channel mobility reduction with decreasing EOT. © 2006 American Institute of Physics.