Publications

68 results for Effendi Leobandung

High-mobility high-Ge-content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Circuits 2015
High-mobility High-Ge-Content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Technology 2015
Strained-SiGe channel FinFETs for high-performance CMOS: Opportunities and challenges
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2015
- ECS Meeting 2015 Chicago
Etch patterning for advanced devices
- - Effendi Leobandung
- 2015
- SPIE Advanced Lithography 2015
First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In_0.53Ga_0.47As MOSFETs with GMSAT over 2200 μs/μm at V_DD = 0.5 v
- - Yanning Sun
  - Amlan Majumdar
  - et al.
- 2014
- IEDM 2014
A four-FET method for extracting mobility in FETs without field oxide
- - Amlan Majumdar
  - Ko-Tao Lee
  - et al.
- 2014
- IEEE T-ED
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- ECSSMEQ 2014
CMOS-Compatible self-aligned In_0.53Ga_0.47As MOSFETs with gate lengths down to 30 nm
- - Amlan Majumdar
  - Yanning Sun
  - et al.
- 2014
- IEEE T-ED
Strained Si_1-xGe_x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- VLSI Technology 2014