Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
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39 results for Joel P. de Souza
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- ECS Meeting 2007
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- Journal of Applied Physics
Advanced applications of semiconductor epitaxy for cutting edge integrated circuit technology
- D.K. Sadana
- M. Yang
- et al.
- 2006
- ECS Meeting 2006
Single wafer sSOI by SIMOX
- J.P. De Souza
- S.W. Bedell
- et al.
- 2006
- ISTDM 2006
Amorphization/templated recrystallization (ATR) method for hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2006
- MRS Spring Meeting 2006
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Strain engineering for silicon CMOS technology
- D.K. Sadana
- S.W. Bedell
- et al.
- 2005
- ECS Meeting 2005
Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2005
- Applied Physics Letters
Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
- I. Danilov
- H. Boudinov
- et al.
- 2005
- Journal of Applied Physics