Enabling RFCMOS solutions for emerging advanced applications
- John J. Pekarik
- Douglas D. Coolbaugh
- et al.
- 2005
- GAAS 2005
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42 results for L. Wagner
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability
- Jean-Olivier Plouchart
- Noah Zamdmer
- et al.
- 2005
- IEEE Transactions on Electron Devices
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
- Noah Zamdmer
- Jonghae Kim
- et al.
- 2004
- VLSI Technology 2004
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology
- Neric Fong
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ESSCIRC 2003
Highly Manufacturable 40-50 GHz VCOs in a 120nm System-on-Chip SOI Technology
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IEDM 2003
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003