Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEDM 2011
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17 results for Mark S. Lundstrom
Exciton generation in suspended carbon nanotube FETs: A computational study
- Siyuranga O. Koswatta
- Vasili Perebeinos
- et al.
- 2007
- IEDM 2007
Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
- Seung Hyun Park
- Yang Liu
- et al.
- 2012
- IEEE T-ED
On the interpretation of ballistic injection velocity in deeply scaled MOSFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Mathieu Luisier
- et al.
- 2012
- Nano Letters
Substrate gating of contact resistance in graphene transistors
- Dionisis Berdebes
- Tony Low
- et al.
- 2011
- IEEE T-ED
Temperature dependence of the transconductance in ballistic III-V QWFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2011
- IEEE T-ED