A general approach for the performance assessment of nanoscale silicon FETs
- Jing Wang
- Paul M. Solomon
- et al.
- 2004
- IEEE Transactions on Electron Devices
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17 results for Mark S. Lundstrom
Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
Thermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors
- E.S. Harmon
- M.R. Melloch
- et al.
- 1994
- Applied Physics Letters
Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- IEEE Transactions on Electron Devices
Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon
- M.L. Lovejoy
- M.R. Melloch
- et al.
- 1992
- Applied Physics Letters