IEEE Transactions on Electron Devices

Paper

01 Jan 1993

VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics

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Abstract

No abstract available.

Paper

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GaAs buffer layers grown at low substrate temperatures using As₂ and the formation of arsenic precipitates

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InAs bipolar transistors: A path to high-performance cryogenic electronics

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