Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- James J. Kelly
- Takeshi Nogami
- et al.
- 2011
- ECS Meeting 2011
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11 results for T. Vo
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
Deposition of copper on ruthenium for Cu metallization
- J. Kelly
- O. Van Der Straten
- et al.
- 2010
- ECS Transactions
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Robust and low cost copper contact application for low power device at 32 nm-node and beyond
- Atsunobu Isobayashi
- James J. Kelly
- et al.
- 2009
- IITC 2009
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
Morphology of electrodeposited Cu on 300 mm PEALD Ru substrates
- J. Kelly
- T. Vo
- et al.
- 2008
- ECS Meeting 2008
PEALD Ru liner conformality and Cu trench fill characteristics
- O. Van Der Straten
- J. Wynne
- et al.
- 2008
- ECS Meeting 2008
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES