FEOL technology trend
Yuan Taur, Tak H. Ning
Materials Chemistry and Physics
Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on-off charge performance with more degradation at higher doping. The results also indicate a major issue: dopant number fluctuations in minimum width junctionless MOSFETs. A first-order analytic expression shows that the one-sigma threshold fluctuation is proportional to the square root of doping concentration. Inclusion of the quantum effect makes no significant difference to the results. © 2011 IEEE.
Yuan Taur, Tak H. Ning
Materials Chemistry and Physics
Yuan Taur, Yuh-Jier Mii, et al.
IEEE Electron Device Letters
Wen-Hsing Chang, Bijan Davari, et al.
IEEE T-ED
Bijan Davari, Wen-Hsing Chang, et al.
IEEE T-ED