Extendibility of Cu damascene to 0.1 μm wide interconnections
- C.-K. Hu
- K.Y. Lee
- et al.
- 1998
- MRS Spring Meeting 1998
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81 results for Kevin Chan
Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel
- H.-S. Wong
- K.K. Chan
- et al.
- 1997
- IEDM 1997
Monolithic Spiral Inductors Fabricated Using a VLSI Cu-Damascene Interconnect Technology and Low-Loss Substrates
- J.N. Burghartz
- D. Edelstein
- et al.
- 1996
- IEDM 1996
Volatile and non-volatile memories in silicon with nano-crystal storage
- S. Tiwari
- F. Rana
- et al.
- 1995
- IEDM 1995
Electrical characteristics of ultra-thin multi-layers of poly-Si and silicon dioxide
- K.K. Chan
- Y.H. Lee
- et al.
- 1994
- MRS Fall Meeting 1994
High temperature stability and relaxation of UHV/CVD SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- MRS Fall Meeting 1992
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters