Growth and scaling of oxide conduction after breakdownBarry P. LinderJames H. Stathiset al.2003IRPS 2003
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabricationK.W. GuariniA. Topolet al.2002IEDM 2002
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectricsBarry P. LinderSalvatore Lombardoet al.2002IEEE Electron Device Letters
Supply voltage strategies for minimizing the power of CMOS processorsJin CaiYuan Tauret al.2002VLSI Technology 2002
Design considerations for CMOS near the limits of scalingDavid J. FrankYuan Taur2002Solid-State Electronics
Transistor-limited constant voltage stress of gate dielectricsB.P. LinderD.J. Franket al.2001VLSI Technology 2001
Calculating the error in long term oxide reliability estimatesB.P. LinderJ.H. Stathiset al.2001IRPS 2001
Calculating the error in long term oxide reliability estimatesB.P. LinderJ.H. Stathiset al.2001IRPS 2001