A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
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28 results for D.D. Restaino
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Virtual metrology and run-to-run control in semiconductor manufacturing
- Yada Zhu
- Robert J. Baseman
- et al.
- 2012
- ISSAT-RQD 2012
Optimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Optimized interfacial strength for dense and porous SiCOH
- D.D. Restaino
- Steve Molis
- et al.
- 2007
- ADMETA 2007
Development and optimization of porous pSiCOH interconnect dielectrics for 45 nm and beyond
- A. Grill
- S. Gates
- et al.
- 2008
- IITC 2008
Enhanced cracking resistance of plasma deposited low k SiCOH films with nano imbedded layers
- Son Nguyen
- Eric Liniger
- et al.
- 2007
- ECS Meeting 2007
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
Non-poisoning dual damascene patterning scheme for low-k and ultra low-k BEOL
- W. Cote
- D. Edelstein
- et al.
- 2006
- ADMETA 2006