Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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117 results for Gottlieb S. Oehrlein

A study of CClF₃/H₂ reactive ion etching damage and contamination effects in silicon
- - X.C. Mu
  - S.J. Fonash
  - et al.
- 1986
- Journal of Applied Physics
Schottky diode analysis for evaluation of RIE effects on silicon surfaces
- - P. Spirito
  - C.M. Ransom
  - et al.
- 1986
- Solid-State Electronics
Summary Abstract: Reactive ion-etching-related Si surface residues and subsurface disorder
- - G.S. Oehrlein
  - J.G. Clabes
  - et al.
- 1986
- JVSTA
Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy
- - R.M. Feenstra
  - G.S. Oehrlein
- 1985
- Applied Physics Letters
Silicon near-surface disorder and etch residues caused by CCIF ₃/H₂ reactive ion etching
- - G.S. Oehrlein
  - C.M. Ransom
  - et al.
- 1985
- Applied Physics Letters
Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- - R. Kalish
  - G.S. Oehrlein
  - et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- - T.O. Sedgwick
  - Alwin E. Michel
  - et al.
- 1985
- Applied Physics Letters
Asymptotic estimates of diffusion times for rapid thermal annealing
- - J.D. Fehribach
  - R. Ghez
  - et al.
- 1985
- Applied Physics Letters
Raman spectroscopy of reactive ion etching induced subsurface damage
- - J.C. Tsang
  - G.S. Oehrlein
  - et al.
- 1985
- Applied Physics Letters
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- - R. Ghez
  - G.S. Oehrlein
  - et al.
- 1984
- Applied Physics Letters