A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon
- X.C. Mu
- S.J. Fonash
- et al.
- 1986
- Journal of Applied Physics
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117 results for Gottlieb S. Oehrlein
Schottky diode analysis for evaluation of RIE effects on silicon surfaces
- P. Spirito
- C.M. Ransom
- et al.
- 1986
- Solid-State Electronics
Summary Abstract: Reactive ion-etching-related Si surface residues and subsurface disorder
- G.S. Oehrlein
- J.G. Clabes
- et al.
- 1986
- JVSTA
Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy
- R.M. Feenstra
- G.S. Oehrlein
- 1985
- Applied Physics Letters
Silicon near-surface disorder and etch residues caused by CCIF 3/H2 reactive ion etching
- G.S. Oehrlein
- C.M. Ransom
- et al.
- 1985
- Applied Physics Letters
Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- R. Kalish
- G.S. Oehrlein
- et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Asymptotic estimates of diffusion times for rapid thermal annealing
- J.D. Fehribach
- R. Ghez
- et al.
- 1985
- Applied Physics Letters
Raman spectroscopy of reactive ion etching induced subsurface damage
- J.C. Tsang
- G.S. Oehrlein
- et al.
- 1985
- Applied Physics Letters
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters