Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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117 results for Gottlieb S. Oehrlein

Grazing angle optical emission interferometry for end-point detection
- - David Angell
  - Gottlieb S. Oehrlein
- 1991
- Applied Physics Letters
Photoluminescence characterization of plasma exposed silicon surfaces
- - A. Henry
  - B. Monemar
  - et al.
- 1991
- Journal of Applied Physics
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- - H. Weman
  - J.L. Lindström
  - et al.
- 1990
- Journal of Applied Physics
X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- - A.S. Yapsir
  - G.S. Oehrlein
  - et al.
- 1990
- Applied Physics Letters
Cryogenic reactive ion etching of silicon in SF₆
- - Tim D. Bestwick
  - Gottlieb S. Oehrlein
  - et al.
- 1990
- Applied Physics Letters
Selective dry etching of silicon with respect to germanium
- - G.S. Oehrlein
  - T.D. Bestwick
  - et al.
- 1990
- Applied Physics Letters
Strain-induced quantum confinement of carriers due to extended defects in silicon
- - H. Weman
  - B. Monemar
  - et al.
- 1990
- Physical Review B
Reactive ion etching of silicon using bromine containing plasmas
- - Tim D. Bestwick
  - Gottlieb S. Oehrlein
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Study of oxygen addition to CF₃Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
- - T.D. Bestwick
  - G.S. Oehrlein
  - et al.
- 1989
- Applied Physics Letters
Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayers
- - G.S. Oehrlein
  - R. Kalish
- 1989
- Applied Physics Letters