Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
- M.J. Rooks
- G.M. Cohen
- et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publications
Date
Featured collections
Popular topics
27 results for R.J. Miller
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
Gate-dielectric permitivity and metal-gate work-function tradeoff in Lmet = 25 nm PDSOI device characteristics
- Dechao Guo
- Andres Bryant
- et al.
- 2006
- IEEE Electron Device Letters
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Quantities, terminology, and symbols in photothermal and related spectroscopies (IUPAC recommendations 2004)
- Masahide Terazima
- Noboru Hirota
- et al.
- 2004
- Pure and Applied Chemistry
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
New polysilicon disposable sidewall process for sub-50 nm CMOS
- K.L. Lee
- D. Boyd
- et al.
- 2001
- ESSDERC 2001
High performance of planar double gate MOSFETs with thin backgate dielectrics
- E.C. Jones
- M. Ieong
- et al.
- 2001
- DRC 2001
SEMATECH minienvironment benchmarking project
- Laura B. Rothman
- R.J. Miller
- et al.
- 1995
- Journal of the IES