Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si
- Kai Shum
- P.M. Mooney
- et al.
- 1997
- Applied Physics Letters
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148 results for Jack O. Chu
Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature
- P.M. Mooney
- L. Tilly
- et al.
- 1997
- Journal of Applied Physics
Quantum-confined biexcitons i grown on Si(001)
- Kai Shum
- P.M. Mooney
- et al.
- 1997
- Physical Review B - CMMP
Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Electrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate
- S. Rishton
- K. Ismail
- et al.
- 1997
- Microelectronic Engineering
New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
- S. Rishton
- K. Ismail
- et al.
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
Thermal stability of undoped strained Si channel SiGe heterostructures
- H. Klauk
- T.N. Jackson
- et al.
- 1996
- Applied Physics Letters
Weak localization in back-gated S quantum-well wires fabricated by reactive ion etching
- S.J. Koester
- K. Ismail
- et al.
- 1996
- Physical Review B - CMMP