High-Performance Si/SiGe n-Type Modulation-Doped Transistors
- Khaled Ismail
- S. Rishton
- et al.
- 1993
- IEEE Electron Device Letters
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148 results for Jack O. Chu
High-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- IEEE Electron Device Letters
Germanium-on-insulator photodetectors
- S.J. Koester
- G. Dehlinger
- et al.
- 2005
- GFP 2005
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions
- G.M. Cohen
- P. Solomon
- et al.
- 2007
- DRC 2007
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications
- S.J. Koester
- L. Schares
- et al.
- 2006
- ECS Meeting 2006
High mobility strained Ge / SiGe PMOSFETs for high performance CMOS
- Huiling Shang
- J.O. Chu
- et al.
- 2006
- ECS Meeting 2006
High-speed germanium-on-insulator photodetectors
- G. Dehlinger
- J. Schaub
- et al.
- 2005
- LEOS 2005
High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth
- S.J. Koester
- J. Schaub
- et al.
- 2004
- DRC 2004