Localized and nonlocalized states in thin Ge layers grown by molecular-beam epitaxy at low temperatures
- J.C. Tsang
- J. Freeouf
- et al.
- 1992
- Physical Review B
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135 results for James C. Tsang
Finite layer thickness and disorder effects in Raman scattering from ultrathin Ge films
- James C. Tsang
- 1992
- QELS 1992
Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane Flow
- Gregory N. Parsons
- John J. Boland
- et al.
- 1992
- Japanese Journal of Applied Physics
X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layers
- J. Freeouf
- J.C. Tsang
- et al.
- 1990
- Physical Review Letters
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
Intervalley and electron-electron scattering rates measured in p-GaAs with hot electron luminescence
- J.A. Kash
- R. Ulbrich
- et al.
- 1989
- QELS 1989
Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1989
- Physical Review B
Sub-picosecond raman spectroscopy of semiconductors
- J.C. Tsang
- J.A. Kash
- 1989
- Proceedings of SPIE 1989
Light scattering from ultrathin Si and Ge layers
- James C. Tsang
- 1989
- Proceedings of SPIE 1989