Suppression of boron diffusion in deep submicron devices
- Michael A. Gribelyuk
- Phil Oldiges
- et al.
- 2011
- Journal of Vacuum Science and Technology B
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12 results for Jun Yuan
Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
Electron holography for 2-D dopant profiling
- Michael A. Gribelyuk
- Jun Yuan
- et al.
- 2009
- IWJT 2009
Blanket SMT with in situ N2 plasma treatment on the lang;100〉 wafer for the low-cost low-power technology application
- Jun Yuan
- Victor Chan
- et al.
- 2009
- IEEE Electron Device Letters
SMT and enhanced SPT with Recessed SD to improve CMOS Device Performance
- S. Fang
- S.S. Tan
- et al.
- 2008
- ICSICT 2008
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
Gate-induced-drain-leakage current in 45-nm CMOS technology
- Xiaohin Yuan
- Jae-Eun Park
- et al.
- 2008
- IEEE T-DMR
High performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007
Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology
- Xiaobin Yuan
- Jae-Eun Park
- et al.
- 2007
- IIRW 2007
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006