K.A. Chao
Physical Review B
Two-dimensional electrostatic potential of 45 nm technology semiconductor devices was mapped by electron holography with 2 nm resolution. The 2-D active dopant distribution was reconstructed by the inverse modeling of the electrostatic potential. Identically manufactured devices with and without a carbon co-implant were compared. The authors show that in the presence of the carbon co-implant, the two-dimensional diffusion of the boron halo implant during thermal processing is reduced. It is demonstrated that the carbon co-implant improves the control of the device short channel effects. © 2011 American Vacuum Society.
K.A. Chao
Physical Review B
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
A. Krol, C.J. Sher, et al.
Surface Science
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures