J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Two-dimensional electrostatic potential of 45 nm technology semiconductor devices was mapped by electron holography with 2 nm resolution. The 2-D active dopant distribution was reconstructed by the inverse modeling of the electrostatic potential. Identically manufactured devices with and without a carbon co-implant were compared. The authors show that in the presence of the carbon co-implant, the two-dimensional diffusion of the boron halo implant during thermal processing is reduced. It is demonstrated that the carbon co-implant improves the control of the device short channel effects. © 2011 American Vacuum Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009