Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers
- P. Linger
- G.L. Bona
- et al.
- 1992
- ISLC 1992
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54 results for D.J. Webb
In-situ CI 2 thermal etching of GaAs/AiGaAs for damage removal in a plasma etcher
- J.S. Lechaton
- P. Buchmann
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Full wafer technology for semiconductor lasers
- P. Buchmann
- M. Benedict
- et al.
- 1990
- LEOS 1990
Full wafer processing and testing-the future of large scale laser fabrication
- P. Vettiger
- M. Benedict
- et al.
- 1990
- ISLC 1990
Investigation of GaAs/AIGaAs quantum well lasers by micro raman spectroscopy
- S. Beeck
- T. Egeler
- et al.
- 1989
- ESSDERC 1989
Mobility and Dit distributions for p-channel MOSFETs with HfO 2/LaGeO x passivating layers on germanium
- C. Andersson
- M.J. Süess
- et al.
- 2011
- Journal of Applied Physics
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2011
- Applied Physics Letters
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
- K. Moselund
- H. Ghoneim
- et al.
- 2010
- Nanotechnology