Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
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10 results for Changhwan Choi
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Ultimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Millisecond flash annealing as a flatband voltage shift enabler for p-type metal-oxide-semiconductor devices with high-k/metal gate
- Changhwan Choi
- Vijay Narayanan
- 2011
- Electrochemical and Solid-State Letters
Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- Changhwan Choi
- Kam-Leung Lee
- et al.
- 2011
- Applied Physics Letters
Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Changhwan Choi
- Takashi Ando
- et al.
- 2011
- Applied Physics Letters
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
- C. Choi
- E. Cartier
- et al.
- 2007
- Microelectronic Engineering